Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...
Abstract: This study aimed to evaluate the reliability of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under extremely high gate voltage stress. The research ...
We break down the 12 technical and psychological logo design basics that actually matter for SMBs in 2026. Forget "pretty"; focus on brand equity, technical scalability, and semantic visibility. I ...
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